AT25DF021 2Mbit,SPI接口串行Flash存儲(chǔ)器
| Density |
2M |
| I/O Pins |
8 |
| Interface Type |
SPI |
| Page Size (Bytes) |
256 |
| Vcc (V) |
2.3V-3.6V
2.7V-3.6V |
| Pb-Free Packages |
UDFN 8
SOIC (150mil) 8 |
2-Mbit, 2.3V- or 2.7V-Minimum, 70 MHz SPI Serial Flash Memory, Byte and Page Program, Block Erase (4KB, 32KB, and 64KB) and Chip Erase, Individual Sector Protection with Global Protect/Unprotect Feature, Hardware and Software Locking, Security Register, Automatic Program/Erase Fail Reporting, JEDEC Standard ID, 8-lead SOIC (150-mil), 8-Contact UDFN (5 x 6 x 0.6 mm)
The AT25DF021 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shadowed from Flash memory into embedded or external RAM for execution. The flexible erase architecture of the AT25DF021, with its erase granularity as small as 4 Kbytes, makes it ideal for data storage as well, eliminating the need for additional data storage EEPROM devices. The physical sectoring and the erase block sizes of the AT25DF021 have been optimized to meet the needs of today's code and data storage applications. By optimizing the size of the physical sectors and erase blocks, the memory space can be used much more efficiently.
Because certain code modules and data storage segments must reside by themselves in their own protected sectors, the wasted and unused memory space that occurs with large sectored and large block erase Flash memory devices can be greatly reduced. This increased memory space efficiency allows additional code routines and data storage segments to be added while still maintaining the same overall device density.
The AT25DF021 also offers a sophisticated method for protecting individual sectors against
erroneous or malicious program and erase operations. By providing the ability to individually protect and unprotect sectors, a system can unprotect a specific sector to modify its contents while keeping the remaining sectors of the memory array securely protected. This is useful in applications where program code is patched or updated on a subroutine or module basis, or in applications where data storage segments need to be modified without running the risk of errant modifications to the program code segments. In addition to individual sector protection capabilities, the AT25DF021 incorporates Global Protect and Global Unprotect features that allow the entire memory array to be either protected or unprotected all at once. This reduces overhead during the manufacturing process since sectors do not have to be unprotected one-by-one prior to initial programming. The device also contains a specialized OTP (One-Time Programmable) Security Register that can be used for purposes such as unique device serialization, system-level Electronic Serial Number (ESN) storage, locked key storage, etc.Specifically designed for use in 2.5-volt or 3-volt systems, the AT25DF021 supports read, program,and erase operations with a supply voltage range of 2.3V to 3.6V or 2.7V to 3.6V. Noseparate voltage is required for programming and erasing.
AT25DF021 特性
- Single 2.3V - 3.6V or 2.7V - 3.6V Supply
- Serial Peripheral Interface (SPI) Compatible
– Supports SPI Modes 0 and 3
- 70 MHz Maximum Operating Frequency
– Clock-to-Output (tV) of 6 ns Maximum
- Flexible, Optimized Erase Architecture for Code + Data Storage Applications
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
- Individual Sector Protection with Global Protect/Unprotect Feature
– Four Sectors of 64 Kbytes Each
- Hardware Controlled Locking of Protected Sectors via WP Pin
- 128-Byte Programmable OTP Security Register
- Flexible Programming
– Byte/Page Program (1 to 256 Bytes)
- Fast Program and Erase Times
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 450 ms Typical 64-Kbyte Block Erase Time
- Automatic Checking and Reporting of Erase/Program Failures
- JEDEC Standard Manufacturer and Device ID Read Methodology
- Low Power Dissipation
– 7 mA Active Read Current (Typical at 20 MHz)
– 8 μA Deep Power-Down Current (Typical)
- Endurance: 100,000 Program/Erase Cycles
- Data Retention: 20 Years
- Complies with Full Industrial Temperature Range
- Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– 8-lead SOIC (150-mil Wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
AT25DF021 訂購(gòu)型號(hào)
AT25DF021 技術(shù)支持
- ATMEL 愛(ài)特梅爾Flash 存儲(chǔ)器AT25DF021 數(shù)據(jù)手冊(cè)DataSheet 下載. PDF（PDF 文件格式完整版）
- 串行Flash 產(chǎn)品選型指南（
Excel 文檔格式）
- ATMEL 愛(ài)特梅爾公司全線產(chǎn)品目錄. pdf
